产品型号 | 事情模式 | VDD规模 | 待机功耗 | 最高事情频率 | 能效标准 | 内置BJT/MOS最大集电极电流Ic/Rds_on | 内置BJT/MOS击穿电压BVCBO(V) | 输出功率规模(W) |
S7141S | DCM | 自供电 | <75mW | <75K | 六级能效 | 0.3A | 850V | ≤3W |
S7142S | DCM | 自供电 | <75mW | <75K | 六级能效 | 1A | 850V | ≤5W |
S7132S | DCM | 5V~22V | <75mW | <75K | 六级能效 | 0.8A | 850V | ≤5W |
S7133B | DCM | 5V~22V | <75mW | <75K | 六级能效 | 2A | 750V | ≤10W |
S7133S | DCM | 5V~22V | <75mW | <75K | 六级能效 | 2A | 750V | ≤10W |
S7134B | DCM | 5V~22V | <75mW | <75K | 六级能效 | 4A | 750V | ≤12W |
S7134C | DCM | 5V~22V | <75mW | <75K | 六级能效 | 4A | 800V | ≤12W |
BP86213D | DCM/BCM | 5V~22V | <75mW | <75K | 六级能效 | 4.8Ω | 650V | ≤12W |